2SK1157 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
I_D = 2 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
2.0
V_GS = 10 V
Pulse Test
1.6
I_D = 10 A
1.2
0.8
2, 5 A
0.4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1157, 2SK1158
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
V_GS = 10 V
1.0
0.5
15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20
50
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 20 V
Pulse Test
20
–25°C
T_C = 25°C
10
75°C
5
2
1.0
0.5
0.1 0.2
0.5 1.0 2
5 10
Drain Current I_D (A)
5