2SK1157 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1157, 2SK1158
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1157
2SK1158
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
450
V
500
±30
V
7
A
28
A
7
A
60
W
150
°C
–55 to +150
°C
2