BB503M Datasheet, PDF (6/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB503M
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 68 kΩ
16
12
2V
8
3V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V _G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V _{4 V}
R_G = 33 kΩ
3V
24 _{f = 1 kHz}
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V _G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 47 kΩ
24 _{f = 1 kHz}
4V
3V
2V
18
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V _G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 68 kΩ
24 _{f = 1 kHz}
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V _G1 (V)
6