BB503M Datasheet, PDF (1/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB503M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-811B(Z)
3rd. Edition
Jul. 1999
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.8 dB typ. at f = 900 MHz
• High gain; PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
Notes:
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “CS–”.
2. BB503M is individual type number of HITACHI BBFET.