BB503M Datasheet, PDF (5/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
BB503M
Typical Output Characteristics
20
V_G2S = 4 V
V _G1= V_DS
16
12
= ^{22 kΩ}
R ^G _{33 kΩ}
8
47 ^kΩ
68 ^kΩ
4
100 ^kΩ
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 33 kΩ
16
2V
12
4V
3V
8
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V _G1 (V)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 47 kΩ
16
2V
12
4V
8
3V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V _G1 (V)
5