2SK1526 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1526, 2SK1527
5,000
2,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, V_GS = 0
Pulse Test
1,000
500
200
100
50
12
5 10 20 50 100
Reverse Drain Current I_DR (A)
1,000
800
600
Dynamic Input Characteristics
20
V_DD = 100 V
250 V
400 V
16
I_D = 30 A
V_GS
12
400 ^VDS
8
200
V_DD = 400 V
4
250 V
100 V
0
0
80 160 240 320 400
Gate Charge Qg (nc)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
V_GS = 0
f = 1 MHz
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
Switching Characteristics
t_{d (off)}
200
t_f
t_r
100
t_{d (on)}
50
20
V_GS
duty
=
<
110%V, ,VP_DW_{D =..=320}
µs
V
10
0.5 1 2
5 10 20 50
Drain Current I_D (A)
6