2SK1526 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1526, 2SK1527
Power vs. Temperature Derating
300
200
100
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
50
10 V
6V
Pulse Test
5V
40
30
4.5 V
20
10
V_GS = 4 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
1,000
Maximum Safe Operation Area
300
100
30
10
3
1
OpiselriamtiiotendinbythDRisC^DaSrOe(oan_p⁾_{ePrWatio=n1(0Tms1}
C₌
10010_µsµ_s
ms
(1 _Shot)
25°C)
0.3
0.1
1
Ta = 25°C
2SK1526
2SK1527
3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
Ta = 75°C
20
25°C
–25°C
10
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4