2SK1526 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
I_D = 50 A
6
4
20 A
2
10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
0.4
V_GS = 10 V
Pulse Test
0.3
I_D = 50 A
20 A
0.2
10 A
0.1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1526, 2SK1527
Static Drain to Source on State
Resistance vs. Drain Current
5
2 ^{Pulse Test}
1
0.5
0.2
V_GS = 10 V, 15 V
0.1
0.05
2
5 10 20 50 100 200
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
100
V_DS = 10 V
50 Pulse Test
20
T_C = –25°C
25°C
10
75°C
5
2
1
0.5 1 2
5 10 20 50
Drain Current I_D (A)
5