2SK1404 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1404
1,000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di/dt = 50 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
10
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I_DR (A)
1,000
Dynamic Input Characteristics
20
800
V_DD = 100 V
16
250 V
400 V
600
12
V_GS
400
V_DS
8
I_D = 5 A
200
V_DD = 400 V
4
250 V
100 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
10,000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
1,000
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V, V_DD =.. 30 V
PW = 2 µs, duty < 0.1%
200
t_{d (off)}
100
50
t_f
t_r
20
t_{d (on)}
10
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
6