2SK1404 Datasheet, PDF(3/9 Page) Hitachi Semiconductor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

2SK1404 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

◁

2SK1404

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 600

Gate to source breakdown

voltage

V(BR)GSS Â±30

Gate to source leak current

I GSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off) 2.0

Static drain to source on state RDS(on) â

resistance

Forward transfer admittance |yfs|

3.0

Input capacitance

Ciss â

Output capacitance

Coss â

Reverse transfer capacitance Crss â

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note: 1. Pulse test

Typ Max

Â±10

250

3.0

1.1

1.5

5.0

1000 â

250 â

105 â

0.9

500 â

Unit

ÂµA

â¦

Test conditions

ID = 10 mA, VGS = 0

IG = Â±100 ÂµA, VDS = 0

VGS = Â±25 V, VDS = 0

VDS = 500 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2.5 A, VGS = 10 V *1

ID = 2.5 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 2.5 A, VGS = 10 V,

RL = 12 â¦

IF = 5 A, VGS = 0

IF = 5 A, VGS = 0,

diF/dt = 100 A/Âµs

▷