2SK1404 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1404
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
10
10 V
6V
Pulse Test
5V
8
6
4.5 V
4
2
4V
V_GS = 3 V _{3.5 V}
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
50
30
10
3
1
100
ms
µ_s
1
0.3
Ta = 25°C
0.1
0.05
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 20 V
Pulse Test
8
6
4
T_C = 75°C
25°C
2
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4