2SK1334 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1334
Reverse Recovery Time vs.
Reverse Drain Current
500
di/dt = 50 A/µs, Ta = 25°C
V_GS = 0
200
100
50
20
10
5
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
V_DD = 150 V
400
100 V
50 V
16
300
V_GS
12
200 _VDS
I_D = 1 A
8
100
V_DD = 150 V
4
100 V
50 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
1,000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
100
Ciss
Coss
10
Crss
1
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
V_GS = 10 V, V_DD = 30 V
50
PW = 2 µs, duty < 1%
20
t_f
t_{d (off)}
10
t_r
5
t_{d (on)}
2
1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
6