2SK1334 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
voltage
V_(BR)DSS 200
—
Gate to source breakdown
voltage
V_(BR)GSS ±20
—
Gate to source leak current
I _GSS
—
—
Zero gate voltage drain current I_DSS
—
—
Gate to source cutoff voltage V_GS(off) 2.0
—
Static drain to source on state R_DS(on) —
2.5
resistance
—
4.5
Forward transfer admittance |yfs|
0.4
0.6
Input capacitance
Ciss —
80
Output capacitance
Coss —
40
Reverse transfer capacitance Crss —
7
Turn-on delay time
t _d(on)
—
5
Rise time
t_r
—
8
Turn-off delay time
t _d(off)
—
10
Fall time
t_f
—
7
Body to drain diode forward V_DF
—
1.0
voltage
Body to drain diode reverse t_rr
recovery time
—
75
Notes: 1. Pulse test
2. Marking for 2SK1334 is “BY”.
Max
—
—
±10
50
4.0
3.8
7.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2SK1334
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 160 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 0.5 A, V_GS = 10 V *¹
I_D = 2 A, V_GS = 10 V *¹
I_D = 0.5 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 0.5 A, V_GS = 10 V,
R_L = 60 Ω
I_F = 1 A, V_GS = 0
I_F = 1 A, V_GS = 0,
di_F/dt = 50 A/µs
3