2SK1334 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1334
Power vs. Temperature Derating
1.2
Test Condition:
When using alumina
ceramic board(12.5×20×0.7mm)
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
10 V
8 V _{Pulse Test}
1.6
7V
1.2
6V
0.8
5V
0.4
V_GS = 3 V
4V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
Maximum Safe Operation Area
OpiesrlaimtioitnedinbDtyhCiRs
a_D^r_S^e₍^a_on)
PW ₁
Operat=io1n0(Tms
100
ms
10
µ_s
µ_s
(1 _Shot)
C _{= 25°C)}
Ta = 25°C
0.005
1
3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
2.0
1.6
V_DS = 10 V
Pulse Test
1.2
0.8
0.4
75°C
T_C = 25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4