2SK1304 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1304
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
200
V_GS = 0
Pulse Test
100
50
20
10
5
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
80 ^VDS
V_DD = 25 V
16
50 V
80 V
60
12
V_DD = 80 V
40
50 V
25 V
20
V_GS
8
4
I_D = 40 A
0
0
40 80 120 160 200
Gate Charge Qg (nc)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
Crss
100
V_GS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
200
Switching Characteristics
t_{d (off)}
t_f
100
50
20
10
0.5
t_r
t_{d (on)}
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1%
1.0 2
5 10 20 50
Drain Current I_D (A)
6