2SK1304 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
50 A
1.2
0.8
20 A
0.4
I_D = 10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
2SK1304
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
0.02
V_GS = 4 V
10 V
0.01
0.005
2
5 10 20
50 100 200
Drain Current I_D (A)
Static Drain to Source on State
Resistance vs. Temperature
0.10
0.08
0.06
0.04
0.02
Pulse Test
I_D = 50 A
20 A
10 A
V_GS = 4 V
V_GS = 10 V
50 A
20 A
10 A
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Forward Transfer Admittance
vs. Drain Current
50
20
–25°C
10
T_C = 25°C
75°C
5
2
V_GS = 10 V
Pulse Test
1.0
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)
5