2SK1304 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1304
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
100
10 V
5V
Pulse Test
7V
80
4V
60
3.5 V
40
3V
20
V_GS = 2.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
500
Operation in this Area
200
is Limited by R_{DS (on)}
100
50
20
10
5
2
DC
PW
Opera=tio1n0
Ta = 25°C
1
100
ms
10
µ_s
µ_s
ms
(T
C
=(12S5h°Cot))
1.0
0.5
1
3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
75°C
10
T_C = 25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4