2SK1254 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1254(L), 2SK1254(S)
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
200
V_GS = 0
Pulse Test
100
50
20
10
5
0.1 0.2
0.5 1.0 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
V_DD = 25 V
50 V
80 _VDS
80 V
16
60
V_GS
12
40
8
20
V_DD = 80 V
I_D = 3 A ₄
50 V
25 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
1,000
100
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Coss
Crss
10
V_GS = 0
f = 1 MHz
1
0
10
20 30 40
50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V
V_DD
=•
•
30
V
200
t_{d (off)} ^{PW = 2µs, duty < 1 %}
100
50
t_f
20
t_r
10
5
1.0 0.2
t_{d (on)}
0.5 1.0 2
5 10
Drain Current I_D (A)
6