2SK1254 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
PulseTest
1.6
1.2
3A
0.8
2A
0.4
I_D = 1 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
0.8
I_D = 3 A
0.6
1, 2 A
V_GS = 4 V
0.4
3A
1, 2 A
V_GS = 10 V
0.2
0
–40
0
40 80 120 160
Case Temperature T_C (°C)
2SK1254(L), 2SK1254(S)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1.0
V_GS = 4 V
0.5
10 V
0.2
0.1
0.05
0.2
0.5 1.0 2.0 5.0 10 20
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
10
–25°C
5
V_DS = 10 V
Pulse Test
T_C = 25°C
75°C
2
1.0
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
5