2SK1254 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1254(L), 2SK1254(S)
Power vs. Temperature Derating
30
20
10
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
5
10 V
4V
Pulse Test
4
3V
3
2
2.5 V
1
V_GS = 2 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
50
20
10
5
PW
2
1.0
0.5
Operation
= _{10 ms}
in this
(1
Shot)
0.2 area is limited
0.1 ^{by RDS (on)}
Ta = 25°C
0.05
1 3 10 30 100 300
1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
4 ^{VDS = 10 V}
Pulse Test
3
2
1
75°C
T_C = 25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4