2SC5758 Datasheet, PDF (6/11 Pages) Hitachi Metals, Ltd – Silicon NPN Epitaxial

2SC5758
S₁₁ Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
-10
-.2
-5
-4
-.4
-.6
-.8 _-1
-3
-2
-1.5
Condition: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
( IC = 5 mA)
( IC = 20 mA)
S₂₁ Parameter vs. Frequency
90°
Scale: 8 / div.
120°
60°
150°
30°
180°
0°
-150°
-30°
-120°
-60°
-90°
Condition: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
S₁₂ Parameter vs. Frequency
90°
Scale: 0.06 / div.
120°
60°
150°
30°
180°
0°
-150°
-30°
-120°
-60°
-90°
Condition: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
S₂₂ Parameter vs. Frequency
.8 ¹
.6
1.5
2
.4
3
4
.2
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
-10
-.2
-5
-4
-3
-.4
-2
-.6
-.8 _-1
-1.5
Condition: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 5 mA)
(IC = 20 mA)
Rev.4, Jul. 2001, page 6 of 10