2SC5758 Datasheet, PDF (2/11 Pages) Hitachi Metals, Ltd – Silicon NPN Epitaxial

2SC5758
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
10
3.5
1.5
80
80
150
–50 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Symbol Min
V(BR)CBO 10
ICBO
ICEO
IEBO
hFE
Cob
fT
PG



80
0.65
6
10
Noise figure
NF

Typ




100
0.95
8
13
1.0
Max

600
200
100
130
1.25


2.0
Unit
V
nA
nA
nA
V
pF
GHz
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 10 V, IE = 0
VCE = 3.5 V, RBE = Infinite
VEB = 1.5 V, IC = 0
VCB = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA,
f = 900 MHz
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Rev.4, Jul. 2001, page 2 of 10