2SC5758 Datasheet, PDF (4/11 Pages) Hitachi Metals, Ltd – Silicon NPN Epitaxial

2SC5758
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
IE = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
0.4 0.8 1.2 1.6 2.0
Collector to Base Voltage VCB (V)
Gain Bandwidth Product vs.
Collector Current
20
VCE = 1 V
f =2 GHz
16
12
8
4
0
12
5 10 20 50 100
Collector Current IC (mA)
S₂₁ Parameter vs. Collector Current
20
VCE = 1 V
f = 2 GHz
16
12
8
4
0
12
5 10 20 50 100
Collector Current IC (mA)
Power Gain vs. Collector Current
20
VCE = 1 V
f = 900 MHz
16
12
8
4
0
12
5 10 20 50 100
Collector Current IC (mA)
Rev.4, Jul. 2001, page 4 of 10