HB28C048A6 Datasheet, PDF (52/66 Pages) Hitachi Semiconductor – FLASH ATA Card

HB28C048/032/016A6
DC Characteristics-3 (Ta = 0 to +60˚C, V_CC = 5.0 V ± 10%)
Parameter
Sleep/standby current
Sector read current
Sector write current
Symbol
I _SP1
16MB/32MB/48MB
Typ
Max
0.5
1.0
I_CCR (DC)
40
75
I_CCR (Peak) 80
120
I_CCW (DC)
45
75
I_CCW (Peak) 80
120
Unit Test conditions
mA CMOS level (control signal = V_CC
– 0.2 V)
(In Memory card mode and I/O
card mode)
mA CMOS level (control signal = V_CC
– 0.2 V) during sector read
transfer
mA
mA CMOS level (control signal = V_CC
– 0.2 V) during sector write
transfer
mA
DC Characteristics-4 (Ta = 0 to +60˚C, V_CC = 3.3 V ± 5%)
Parameter
Sleep/standby current
Sector read current
Sector write current
Symbol
I _SP1
16MB/32MB/48MB
Typ
Max
0.3
1.0
I_CCR (DC)
25
50
I_CCR (Peak) 50
80
I_CCW (DC)
25
50
I_CCW (Peak) 50
100
Unit Test conditions
mA CMOS level (control signal = V_CC
– 0.2 V)
(In Memory card mode and I/O
card mode)
mA CMOS level (control signal = V_CC
– 0.2 V) during sector read
transfer
mA
mA CMOS level (control signal = V_CC
– 0.2 V) during sector write
transfer
mA
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