HAT2050T Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Body–Drain Diode Reverse
500
Recovery Time
200
100
50
20
10
5
0.1 0.2
di/dt = 20 A/µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10
Reverse Drain Current I _DR (A)
HAT2050T
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
30
Coss
10
3
Crss
1
0 10 20 30 40 50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
10
I _D= 1 A
40
V _DD = 5 V
10 V
20 V
30
8
V_GS
6
20 ^VDS
4
10
V _DD = 20 V
2
10 V
5V
0
0 _{0.8 1.6 2.4 3.2 4.0}
Gate Charge Qg (nc)
Switching Characteristics
100
V_GS = 4 V, V _DD = 10 V
50 ^{PW = 5 µs, duty < 1 %}
t _d(off)
20
10
t _d(on)
tr
tf
5
2
1
0.01 0.02 0.05 0.1 0.2
0.5 1
Drain Current I _D (A)
5