HAT2050T Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2050T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
100
V
Gate to source voltage
V_GSS
± 20
V
Drain current
I_D
1
A
Drain peak current
I Note1
D(pulse)
4
A
Body-drain diode reverse drain current I_DR
1
A
Channel dissipation
Pch ^Note2
1.0
W
Channel dissipation
Pch ^Note3
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltege drain current
I _DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
100
± 20
—
—
1.3
—
—
0.7
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 4. Pulse test
Typ
—
—
—
—
—
0.56
0.72
1.1
90
42
20
11
24
14
11
0.84
85
Max
—
—
± 10
1
2.3
0.75
1.0
—
—
—
—
—
—
—
—
1.1
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ± 100 µA, V_DS = 0
V_GS = ± 16 V, V_DS = 0
V_DS = 100 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 0.5 A, V_GS = 10 V ^Note4
I_D = 0.5 A, V_GS = 4 V ^Note4
I_D = 0.5 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1MHz
V_GS = 4 V, I_D = 0.5 A
V_DD ≅ 10 V
I_F = 1 A, V_GS = 0 ^Note4
I_F = 1 A, V_GS = 0
diF/ dt = 20 A/µs
2