HAT2050T Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2050T
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
ID=2A
1.2
0.8
1A
0.4
0.5 A
0
2
4
6
8
10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
20
Pulse Test
10
5
2
4V
1
0.5
V_GS = 10 V
0.2
0.2
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
2.0
1.6
I_D = 2 A
1.2
1, 0.5 A
0.8
2A
1, 0.5 A
0.4
4V
V_GS = 2.5 V
0
–40
0
40
Pulse Test
80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
5
2
Tc = –25 °C
1
0.5
75 °C
25 °C
0.2
0.1
0.05
0.02
V _DS = 10 V
Pulse Test
0.05 0.1 0.2 0.5 1 2
Drain Current I _D (A)
4