HAT2049T Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2049T
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10 _{di/dt = 20 A/µs}
5 ^{VGS = 0, Ta = 25°C}
0.1 0.2 0.5 1 2
Reverse Drain Current
5 10
I _DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0 10 20 30 40 50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
10
V _DD = 5 V
10 V
40
20 V
8
I _D= 8 A
30
6
V_GS
V_DS
20
4
10
V _DD = 20 V
2
10 V
5V
0
0
4
8 12 16 20
Gate Charge Qg (nc)
Switching Characteristics
500
200
tf
100
t _d(off)
50
tr
20
t _d(on)
10
5
0.1
V_GS = 4 V, V _DD = 10 V
PW = 3 µs, duty < 1 %
0.2 0.5 1 2
5 10
Drain Current I _D (A)
5