HAT2049T Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2049T
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.25
Pulse Test
0.2
0.15
0.1
ID=5A
0.05
2A
1A
0
2
4
6
8
10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
0.05
0.02
V _GS = 2.5 V
0.01
4V
0.005
0.002
0.2
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
0.04
V _GS = 2.5 V
ID=1 A, 2 A, 5 A
0.02
0
–40
1 A, 2 A, 5 A
4V
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20
10
75 °C
5
25 °C
2
1
0.5
0.2
V _DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I _D (A)
4