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HAT2049T Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching | |||
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HAT2049T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
30
± 12
8
64
8
1.3
Channel temperature
Tch
150
Storage temperature
Tstg
â 55 to + 150
Note: 1. PW ⤠10µs, duty cycle ⤠1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW⤠10s
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
30
± 12
â
â
0.4
â
â
13
â
Output capacitance
Coss â
Reverse transfer capacitance
Crss â
Turn-on delay time
t d(on)
â
Rise time
tr
â
Turn-off delay time
t d(off)
â
Fall time
tf
â
Bodyâdrain diode forward voltage VDF
â
Bodyâdrain diode reverse
recovery time
t rr
â
Note: 3. Pulse test
Typ Max Unit
â
â
V
â
â
V
â
± 0.1 µA
â
1
µA
â
1.4 V
0.013 0.017 â¦
0.017 0.025 â¦
20
â
S
1430 â
pF
410 â
pF
265 â
pF
23
â
ns
165 â
ns
215 â
ns
185 â
ns
0.83 1.08 V
30
â
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 12 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 4 A, VGS = 4 V Note3
ID = 4 A, VGS = 2.5 V Note3
ID = 4 A, VDS = 10 V Note3
VDS = 10 V
VGS = 0
f = 1MHz
VGS = 4 V, ID = 4 A
VDD â
10 V
IF = 8 A , VGS = 0 Note3
IF = 8 A, VGS = 0
diF/ dt = 20 A/µs
2
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