HAT2031T Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1
di/dt = 20 A/µs
V_GS = 0, Ta = 25°C
0.2 0.5 1 2
5 10
Reverse Drain Current I _DR (A)
HAT2031T
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
300
Ciss
100
Coss
30
Crss
10
0 10 20 30 40 50
Drain to Source Voltage V_DDSS (V)
Dynamic Input Characteristics
50
10
I _D = 3.5 A
40
V _DD = 5 V
10 V
30
20 V
20 ^VDS
8
6
V_GS
4
10
V _DD = 20 V 2
10 V
5V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
1000
500
Switching Characteristics
V_GS = 4 V, V _DD = 10 V
PW = 5 µs, duty < 1 %
200
100 _{t f}
50
tr
t _d(off)
20
t _d(on)
10
0.1 0.2 0.5 1 2
5 10
Drain Current I _D (A)
5