HAT2031T Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2031T
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.2
Pulse Test
0.16
0.12
0.08
ID=2A
1A
0.04
0.5 A
0
2
4
6
8
10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
2.5 V
0.05
V_GS = 4 V
0.02
0.01
0.005
0.002
0.2
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.2
0.16
0.12
V_GS = 2.5 V
0.08
I_D = 2, 1, 0.5 A
0.04
0
–40
2, 1, 0.5 A
4V
Pulse Test
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
5
75 °C
25 °C
2
1
0.5
0.2
V _DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I _D (A)
4