HAT2031T Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Main Characteristics
HAT2031T
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
30
10 µs
10
100 µs
3
1
0.3
0.1
Othpiseararet^Dioa^Cni^O_si^pn^{erationP(WPW=<110N10omm}_s^te₎^ss5
limited by R DS(on)
0.03 _{Ta = 25 °C}
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V _DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
20
10V
5V
3V
16
4V
Pulse Test
12
2.5 V
8
2.0 V
4
V_GS = 1.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
20
–25°C
16
25°C
Tc = 75°C
12
8
4
V _DS = 10 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
3