HAT2019R Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2019R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 20 A/µs
5
V_GS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I _DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
10
I _D= 8 A
40
8
V _DD = 5 V
10 V
30
25 V
6
V_DS
20
V_GS
4
10
V _DD = 25 V
2
10 V
5V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Switching Characteristics
500
tr
tf
t _d(off)
50
20
10
5
0.2
t _d(on)
V_GS = 4 V, V _DD = 10 V
PW = 3 µs, duty < 1 %
0.5 1 2
5 10 20
Drain Current I _D (A)
5