HAT2019R Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2019R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.10
Pulse Test
0.08
0.06
0.04
ID=2A
0.02
1A
0.5 A
0
2
4
6
8
10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
20
10
5
0.2
V_GS = 2.5 V
4V
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
40 _{VGS = 2.5 V}
1, 2 A
I _D= 0.5 A
20
0.5, 1, 2 A
4V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20
25 °C
10
5
75 °C
2
1
0.5
0.2
V _DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I _D (A)
4