HAT2019R Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Main Characteristics
HAT2019R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
10 µs
100 µs
30
PW ^{1 ms}
10
3
1
0.3
DC
Operation
Operation
in
(PW
=
<
10 _ms
1^N₀^o_s^te_{) 4}
this area is
0.1 ^{limited by R} DS(on)
0.03 _{Ta = 25 °C}
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
10V ^{T5ypVical Output Characteristics}
50
4.5 V
3V
40
4V
3.5 V
Pulse Test
30
2.5 V
20
2V
10
V_GS = 1.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
50
40
–25°C
Tc = 75°C
30
25°C
20
10
V _DS = 10 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
3