3SK319 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Noise Figure vs. Drain to Source Voltage
5
V _G2S = 3 V
I _D = 10 mA
4
f = 900 MHz
3
2
1
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
3SK319
Power Gain vs. Gate2 to Source Voltage
25
V_DS = 3.5 V
f = 900MHz
20
15
10
5
0
1
2
3
4
5
Gate2 to Source Voltage V_G2S (V)
Noise Figure vs. Gate2 to Source Voltage
5
V_DS = 3.5 V
4
f = 900MHz
3
2
1
0
1
2
3
4
5
Gate2 to Source Voltage V_G2S (V)
5