3SK319 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK319
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Electrical Characteristics (Ta = 25°C)
Ratings
Unit
6
V
±6
V
±6
V
20
mA
150
mW
150
°C
–55 to +150
°C
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol Min
V 6 _(BR)DSS
V_(BR)G1SS ±6
V_(BR)G2SS ±6
I _G1SS
—
I _G2SS
—
V_G1S(off) 0.5
V_G2S(off) 0.5
I _DS(op)
0.5
|y_fs|
18
C_iss
1.3
C_oss
0.9
C_rss
—
PG
18
NF
—
Typ Max Unit Test Conditions
——V
I_D = 200µA, V_G1S = V_G2S = 0
——V
I_G1 = ±10µA, V_G2S = V_DS = 0
——V
I_G2 = ±10µA, V_G1S = V_DS = 0
— ±100 nA
— ±100 nA
0.7 1.0 V
0.7 1.0 V
4
10 mA
24 32 mS
1.6 1.9 pF
1.2 1.5 pF
0.019 0.03 pF
21 — dB
1.4 2.2 dB
V_G1S = ±5V, V_G2S = V_DS = 0
V_G2S = ±5V, V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 3V, I_D = 100µA
V_DS = 5V, V_G1S = 3V, I_D = 100µA
V_DS = 3.5V, V_G1S = 1.1V, V_G2S = 3V
V_DS = 3.5V, V_G2S = 3V
I_D = 10mA , f=1kHz
V_DS = 3.5V, V_G2S = 3V
I_D = 10mA , f= 1MHz
V_DS = 3.5V, V_G2S = 3V
I_D = 10mA , f=900MHz
2