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3SK319 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier | |||
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3SK319
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
Features
⢠Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
⢠Excellent cross modulation characteristics
⢠Capable low voltage operation; +B= 5V
Outline
Note: Marking is âYBââ.
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-602(Z)
1st. Edition
February 1998
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