2SK1298 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
I_D = 50 A
0.4
20 A
10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.05
Pulse Test
0.04
0.03
I_D = 50 A
10 A, 20 A
V_GS = 4 V
0.02
0.01
V_GS = 10 V
50 A
10 A, 20 A
0
–40
0
40
80 120 160
Case Temperature T_C (°C)
2SK1298
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2 ^{Pulse Test}
0.1
0.05
0.02
0.01
0.005
2
V_GS = 4 V
10 V
5 10 20 50 100 200
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
20
–25°C
T_C = 25°C
10
75°C
5
2
V_DS = 10 V
1.0
Pulse Test
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)
5