2SK1298 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1298
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
100 _{10 V}
8V
4.5 V
Pulse Test
80
5V _4V
60
3.5 V
40
3V
20
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
500
200
10 _µs
100
50
1 _ms
20
10
5
DC
Operation _(T
2 ^{Operation in this area}
is limited by R_{DS (on)}
1.0
Ta = 25°C
C _{= 25°C)}
0.5
0.1 0.3 1.0 3
10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 10 V
80
Pulse Test
60
40
75°C
20
T_C
= 25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4