2SK1155 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
5A
4
2A
2
I_D = 1 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
5
V_GS = 10 V
Pulse Test
4
3
I_D = 5 A
2
2A
1A
1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1155, 2SK1156
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
5
V_GS = 10 V
2
15 V
1.0
0.5
0.2
0.1
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 20 V
5 Pulse Test
–25°C
T_C = 25°C
75°C
2
1.0
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
5