2SK1155 Datasheet, PDF(3/9 Page) Hitachi Semiconductor

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2SK1155 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1155, 2SK1156

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min

Drain to source

2SK1155 V(BR)DSS 450

breakdown voltage 2SK1156

500

Gate to source breakdown

voltage

V(BR)GSS Â±30

Gate to source leak current

I GSS

Zero gate voltage 2SK1155 IDSS

drain current

2SK1156

Gate to source cutoff voltage VGS(off) 2.0

Static Drain to source 2SK1155 RDS(on) â

on stateresistance 2SK1156

Forward transfer admittance |yfs|

2.5

Input capacitance

Ciss â

Output capacitance

Coss â

Reverse transfer capacitance Crss â

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note: 1. Pulse test

Typ

1.0

1.2

4.0

640

160

0.95

300

Max Unit

Â±10 ÂµA

250 ÂµA

3.0

1.4

â¦

1.5

Test conditions

ID = 10 mA, VGS = 0

IG = Â±100 ÂµA, VDS = 0

VGS = Â±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2.5 A, VGS = 10 V *1

ID = 2.5 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 2.5 A, VGS = 10 V,

RL = 12 â¦

IF = 5 A, VGS = 0

IF = 5 A, VGS = 0,

diF/dt = 100 A/Âµs

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