2SK1155 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1155, 2SK1156
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
10
10 V
6V
Pulse Test
5.5 V
8
6
5.0 V
4
4.5 V
2
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
50
20
10
5
2
1.0
DC
10
OpPeWrat=io1n0(Tms1 _(m1 ^1ss0h0otµ₎ ^s
µ_s
0.5
0.2
C _{= 25°C)}
Ta = 25°C
0.1
2SK1156
0.05
13
2SK1155
10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
–25°C
T_C = 25°C
8
V_DS = 20 V
Pulse Test
75°C
6
4
2
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4