2SK1056 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation
Voltage vs. Drain Current
10
V_GD = 0
5
25^°C
75^°C
=
–25^°C
T^C
2
1.0
0.5
0.2
0.1
0.1 0.2
0.5 1.0 2
5 10
Drain Current I_D (A)
1000
Input Capacitance vs. Gate
Source Voltage
500
200
100
0
V_DS = 10 V
f = 1 MHz
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
2SK1056, 2SK1057, 2SK1058
Drain to Source Voltage vs.
Gate to Source Voltage
10
8
T_C = 25°C
6
5A
4
2
2A
I_D = _{1 A}
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Forward Transfer Admittance
vs. Frequency
3.0
1.0
0.3
0.1
0.03
0.01
T_C = 25°C
V_DS = 10 V
I_D = 2 A
0.003
10 k 30 k 100 k 300 k 1 M 3 M 10 M
Frequency f (Hz)
5