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2SK1056 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET
2SK1056, 2SK1057, 2SK1058
Outline
TO-3P
D
G
1
2
3
1. Gate
2. Source
(Flange)
S
3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSX
VGSS
ID
I DR
Pch*1
Tch
Tstg
Ratings
Unit
120
V
140
160
±15
V
7
A
7
A
100
W
150
°C
–55 to +150
°C
2