2SK1056 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source
2SK1056 V_(BR)DSX 120
—
breakdown voltage 2SK1057
140
2SK1058
160
Gate to source breakdown
voltage
V_(BR)GSS ±15
—
Gate to source cutoff voltage V_GS(off) 0.15 —
Drain to source saturation
voltage
V_DS(sat)
—
—
Forward transfer admittance |yfs|
0.7
1.0
Input capacitance
Ciss —
600
Output capacitance
Coss —
350
Reverse transfer capacitance Crss —
10
Turn-on time
Turn-off time
Note: 1. Pulse test
t _on
—
180
t _off
—
60
2SK1056, 2SK1057, 2SK1058
Max
—
Unit
V
Test conditions
I_D = 10 mA, V_GS = –10 V
—
V
1.45 V
12
V
1.4
S
—
pF
—
pF
—
pF
—
ns
—
ns
I_G = ±100 µA, V_DS = 0
I_D = 100 mA, V_DS = 10 V
I_D = 7 A, V_GD = 0 *¹
I_D = 3 A, V_DS = 10 V *¹
V_GS = –5 V, V_DS = 10 V,
f = 1 MHz
V_DD = 20 V, I_D = 4 A,
3