HRB0103A Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

HRB0103A
Main Characteristic
120
100
DC
80
D=1/6
60
D=1/3
20hx15wx0.8t
40
20
0
0
sin wave
1.5 _{Unit: mm}
D=1/2
25 50 75 100 125 150
Ambient temperature Ta ( °C)
Io
0
tp
T ^{D= tp}
T
VR=30V
Fig.5 Average rectified current Vs. Ambient temperature
4