HRB0103A Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

Main Characteristic
HRB0103A
10^-2
Pulse test
10^-3
10^-4
10^-5
10^-6
10^-7
10^-8
10^-9
0
0.1 0.2 0.3 0.4 0.5
Forward voltage V _F (V)
Fig.1 Forward current Vs. Forward voltage
10^-2
Pulse test
10^-3
10^-4
10^-5
10^-6
10^-7 ₀
10 20 30 40 50
Reverse voltage V _R (V)
Fig.2 Reverse current Vs. Reverse voltage
0.08
0.07
20hx15wx0.8t
D=1/6
0.08
20hx15wx0.8t
0.07
DC
0.06
0.05
0.04
1.5 Unit: mm
sin wave
D=1/3
D=1/2
DC
0.03
0.02
0.01
0
0
Io
0
tp
T D= ^tp
T
20 40 60 80 100 120
Average rectified current @ @Io @(mA)
0.06
0.05
0.04
0.03
1.5 Unit: mm
0
VR _tp
T D= ^tp
T
0.02
D=5/6
D=2/3
D=1/2
sin wave
0.01
0
0 5 10 15 20 25 30
Peak reverse voltage @ @VRM @(V)
Fig3. Forward power dissipation Vs. Average rectified current Fig4. Reverse power dissipation Vs. Peak reverse voltage
3