HRB0103A Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying

HRB0103A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Repetitive peak reverse V_RRM
voltage
Average rectified current
Non-Repetitive peak
forward surge current
I
*1
o
I ^*2
FSM
Junction temperature
Tj
Storage temperature
Tstg
Note: 1. See Fig.5
Note: 2. 10msec sine wave 1 pulse
Value
Unit
30
V
100
mA
3
A
125
°C
-55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Forward voltage
Reverse current
Symbol Min Typ Max Unit Test Condition
V_F
— — 0.44 V
I_F = 100 mA
I_R
— — 50 µA V_R = 30V
2